FDD86250 ON
Available
FDD86250 ON
Features
Shielded Gate MOSFET Technology
Max rDs(on)= 22 mo at Vcs = 10 V, lp= 8AMax 「os(on)= 31 m at Vcs = 6 V, lp=6.5A100% UIL tested
RoHS Compliant
General Description
This N-Channel MOSFET isproduced _ usingFairchildSemiconductorsadvanced PowerTrenchprocess thatincorporates Shielded Gate technology.This process has beenoptimized for the on-state resistance and yet maintain superiorswitching performance.
Features
Shielded Gate MOSFET Technology
Max rDs(on)= 22 mo at Vcs = 10 V, lp= 8AMax 「os(on)= 31 m at Vcs = 6 V, lp=6.5A100% UIL tested
RoHS Compliant
General Description
This N-Channel MOSFET isproduced _ usingFairchildSemiconductorsadvanced PowerTrenchprocess thatincorporates Shielded Gate technology.This process has beenoptimized for the on-state resistance and yet maintain superiorswitching performance.
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