FOD8342 ACCESO
Disponibile
FOD8342 ACCESO
Features • FOD8342T − 8 mm Creepage and Clearance Distance, and 0.4 mm Insulation Distance to Achieve Reliable and High−Voltage Insulation • 3.0 A Peak Output Current Driving Capability for Medium− Power IGBT/MOSFET ♦ Use of P−Channel MOSFETs at Output Stage Enables Output Voltage Swing Close to Supply Rail • 20 kV/s Minimum Common Mode Rejection • Wide Supply Voltage Range: 10 V to 30 V • Fast Switching Speed Over Full Operating Temperature Range ♦ 210 ns Maximum Propagation Delay ♦ 65 ns Maximum Pulse Width Distortion • Under−Voltage Lockout (UVLO) with Hysteresis • Extended Industrial Temperate Range: −40°C to 100°C • Safety and Regulatory Approvals: ♦ UL1577, 5,000 VRMS for 1 Minute ♦ DIN EN/IEC60747−5−5, 1,140V Peak Working Insulation Voltage
Features • FOD8342T − 8 mm Creepage and Clearance Distance, and 0.4 mm Insulation Distance to Achieve Reliable and High−Voltage Insulation • 3.0 A Peak Output Current Driving Capability for Medium− Power IGBT/MOSFET ♦ Use of P−Channel MOSFETs at Output Stage Enables Output Voltage Swing Close to Supply Rail • 20 kV/s Minimum Common Mode Rejection • Wide Supply Voltage Range: 10 V to 30 V • Fast Switching Speed Over Full Operating Temperature Range ♦ 210 ns Maximum Propagation Delay ♦ 65 ns Maximum Pulse Width Distortion • Under−Voltage Lockout (UVLO) with Hysteresis • Extended Industrial Temperate Range: −40°C to 100°C • Safety and Regulatory Approvals: ♦ UL1577, 5,000 VRMS for 1 Minute ♦ DIN EN/IEC60747−5−5, 1,140V Peak Working Insulation Voltage
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